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Transistors with built-in Resistor
UNR221x Series (UN221x Series)
Silicon NPN epitaxial planar transistor
Unit: mm
For digital circuits Features
* Costs can be reduced through downsizing of the equipment and reduction of the number of parts. * Mini type package allowing easy automatic insertion through tape packing and magazine packing
1
0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3
0.16+0.10 -0.06
2 (0.65)
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05
Resistance by Part Number
* UNR2210 * UNR2211 * UNR2212 * UNR2213 * UNR2214 * UNR2215 * UNR2216 * UNR2217 * UNR2218 * UNR2219 * UNR221D * UNR221E * UNR221F * UNR221K * UNR221L * UNR221M * UNR221N * UNR221T * UNR221V * UNR221Z Marking Symbol (R1) (UN2210) 8L 47 k (UN2211) 8A 10 k (UN2212) 8B 22 k (UN2213) 8C 47 k (UN2214) 8D 10 k (UN2215) 8E 10 k (UN2216) 8F 4.7 k (UN2217) 8H 22 k (UN2218) 8I 0.51 k (UN2219) 8K 1 k (UN221D) 8M 47 k (UN221E) 8N 47 k (UN221F) 8O 4.7 k (UN221K) 8P 10 k (UN221L) 8Q 4.7 k (UN221M) EL 2.2 k (UN221N) EX 4.7 k (UN221T) EZ 22 k (UN221V) FD 2.2 k (UN221Z) FF 4.7 k (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k 10 k 4.7 k 4.7 k 47 k 47 k 47 k 2.2 k 22 k
10 1.1+0.2 -0.1 1.1+0.3 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Internal Connection
R1 B R2 E C
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 200 150 -55 to +150 Unit V V mA mW C C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003 SJH00010CED
0 to 0.1
0.40.2
5
1
UNR221x Series
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR2210/2215/2216/2217 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = -6 V, IC = 0 Min 50 50 0.1 0.5 0.01 0.1 0.2 0.4 0.5 1.0 1.5 2.0 hFE VCE = 10 V, IC = 5 mA 6 20 30 35 60 60 80 80 160 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA IC = 10 mA, IB = 1.5 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k VCC = 5 V, VB = 10 V, RL = 1 k VCC = 5 V, VB = 6 V, RL = 1 k fT R1 VCB = 10 V, IE = -2 mA, f = 200 MHz -30% 150 0.51 1.0 2.2 4.7 10 22 47 +30% MHz k 4.9 0.2 V V 400 460 0.25 V 200 20 Typ Max Unit V V A A mA
cutoff current UNR2213 (Collector open) UNR2212/2214/221D/ 221E/221M/221N/221T UNR221Z UNR2211 UNR221F/221K UNR2219 UNR2218/221L/221V Forward current UNR221V transfer ratio UNR2218/221K/221L UNR2219/221D/221F UNR2211 UNR2212/221E UNR221Z UNR2213/2214/221M UNR221N/221T UNR2210*/2215*/2216*/2217* Collector-emitter saturation voltage UNR221V Output voltage high-level Output voltage low-level UNR2213/221K UNR221D UNR221E Transition frequency Input resistance UNR2218 UNR2219 UNR221M/211V UNR2216/221F/221L/ 221N/221Z UNR2211/2214/2215/221K UNR2212/2217/221T UNR2210/2213/221D/221E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460
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UNR221x Series
Electrical Characteristics (continued) Ta = 25C 3C
Parameter Resistance ratio UNR221M UNR221N UNR2218/2219 UNR221Z UNR2214 UNR221T UNR221F UNR221V UNR2211/2212/2213/221L UNR221K UNR221E UNR221D 0.8 1.70 1.70 3.7 0.37 0.17 0.08 Symbol R1/R2 Conditions Min Typ 0.047 0.1 0.10 0.21 0.21 0.47 0.47 1.0 1.0 2.13 2.14 4.7 1.2 2.60 2.60 5.7 0.57 0.25 0.12 Max Unit
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
250
Total power dissipation PT (mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of UNR2210 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
60
IB = 1.0 mA 0.9 mA 0.8 mA
Forward current transfer ratio hFE
50
Collector current IC (mA)
10
300 Ta = 75C 25C 200 -25C 100
40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA
30
0.3 mA
1 Ta = 75C 25C 0.1 -25C 0.01 0.1
20
10
0
0
1 10 100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR221x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2211 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
160
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA
10
Forward current transfer ratio hFE
300
Ta = 75C
80
0.3 mA
1 25C 0.1 -25C
200 25C 100 -25C
0.2 mA 40
Ta = 75C
0.1 mA 0 0 2 4 6 8 10 12
0.01 0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR221x Series
Characteristics charts of UNR2212 IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
400
hFE IC
VCE = 10 V
160
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA
10
Forward current transfer ratio hFE
300
Ta = 75C
80 0.3 mA
1 Ta = 75C
200 25C -25C
25C 0.1 -25C
40
0.2 mA
100
0.1 mA 0 0 2 4 6 8 10 12
0.01 0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.01
0.1 1 10 100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2213 IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
160
Forward current transfer ratio hFE
Collector current IC (mA)
120
10
300
Ta = 75C 25C -25C
1
200
40
0.2 mA
25C 0.1 -25C 0.01 0.1
Ta = 75C
100
0.1 mA 0
0
2
4
6
8
10
12
1
10
100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR221x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
Input voltage VIN (V)
103
10
102
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2214 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 80 0.4 mA 0.3 mA 40
100
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
Collector current IC (mA)
120
10
Forward current transfer ratio hFE
300 Ta = 75C 200 25C -25C 100
1
Ta = 75C 0.1 -25C 0.01 0.1 1 10 100 25C
0.2 mA 0.1 mA
0
0
2
4
6
8
10
12
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR221x Series
Characteristics charts of UNR2215 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
160
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA
10
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta = 75C
80
1
200 25C -25C 100
Ta = 75C 0.1 -25C 0.01 0.1 1 10 100 25C
40
0
0
2
4
6
8
10
12
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2216 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA
100
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
120
10
Forward current transfer ratio hFE
Ta = 75C 300 25C -25C 200
Collector current IC (mA)
80
1
Ta = 75C 0.1 25C
40
100
0.1 mA
0 0 2 4 6 8 10 12
-25C 0.01 0.1 1 10 100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR221x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2217 IC VCE
a IB =1 .0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA
VCE(sat) IC
T = 25C
hFE IC
400 VCE = 10 V
10
Forward current transfer ratio hFE
100
Collector-emitter saturation voltage VCE(sat) (V)
120
100
IC / IB = 10
Collector current IC (mA)
300
80 0.4 mA 0.3 mA 0.2 mA
60
1
Ta = 75C
200
Ta = 75C 25C
40
25C 0.1
100
-25C
20 0 0 2 4 6 8
0.1 mA
-25C 0.01 0.1 1 10 100
10
12
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
Input voltage VIN (V)
103
10
102
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR221x Series
Characteristics charts of UNR2218 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
160
hFE IC
VCE = 10 V
240
Collector current IC (mA)
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA
Forward current transfer ratio hFE
200
10
120
Ta = 75C 80 25C -25C 40
120 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0 0.1 mA 0 2 4 6 8 10 12
1 Ta = 75C
80
0.1
25C
40
-25C 0.01 0.1
0
1
10
100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2219 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
160
hFE IC
VCE = 10 V
240
Collector current IC (mA)
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
10
Forward current transfer ratio hFE
200
120
120 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
1 Ta = 75C 25C 0.1
80
Ta = 75C 25C -25C
80
40
40
-25C 0.01 0.1
0
1
10
100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR221x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6
IO VIN
f = 1 MHz IE = 0 Ta = 25C
VIN IO
VO = 5 V Ta = 25C
100 VO = 0.2 V Ta = 25C
104
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0
0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR221D IC VCE
Ta = 25C 0.9 mA 0.8 mA 0.5 mA 0.7 mA 0.4 mA 25 0.6 mA 0.3 mA IB = 1.0 mA 20
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
160 VCE = 10 V Ta = 75C 25C -25C 120
30
10
15 0.2 mA 10 0.1 mA
1
Forward current transfer ratio hFE
100
Collector current IC (mA)
80
25C 0.1 -25C 0.01 0.1
Ta = 75C
40
5
0
0
2
4
6
8
10
12
1
10
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
2.0 2.5 3.0 3.5 4.0
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 1.5
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR221x Series
Characteristics charts of UNR221E IC VCE
IB = 1.0 mA 0.7 mA Ta = 25C 0.9 mA 0.6 mA 0.8 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
160
hFE IC
VCE = 10 V
60
Forward current transfer ratio hFE
50
Collector current IC (mA)
10
120
Ta = 75C 25C -25C
40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA
30
1
Ta = 75C
80
20
25C 0.1
40
10
-25C 0.01 0.1 1 10 100
0 1 10 100 1 000
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR221F IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
160
hFE IC
VCE = 10 V
240
160
0.9 mA 0.8 mA 0.7 mA 0.6 mA IB = 1.0 mA 0.5 mA 0.4 mA 0.3 mA
10
Forward current transfer ratio hFE
200
Collector current IC (mA)
120
120
1
Ta = 75C
Ta = 75C 80 25C -25C
80
25C 0.1
40
40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
-25C 0.01 0.1 1 10 100
0 1 10 100 1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR221x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR221K IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
100
VCE(sat) IC
IC / IB = 10
hFE IC
240 VCE = 10 V
10
160 IB = 1.2 mA 1.0 mA 0.8 mA 80 0.6 mA 0.4 mA 0.2 mA 0 0 2 4 6 8 10 12
Forward current transfer ratio hFE
200
200
Collector current IC (mA)
160 Ta = 75C 120 25C 80 -25C 40
120
1
25C 0.1
Ta = 75C -25C
40
0.01
1
10
100
1 000
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
4
3
Input voltage VIN (V)
1 10 100
10
1
2
0.1
1
0
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Output current IO (mA)
12
SJH00010CED
UNR221x Series
Characteristics charts of UNR221L IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
100
VCE(sat) IC
IC / IB = 10
240
hFE IC
VCE = 10 V
200
10
Forward current transfer ratio hFE
200 Ta = 75C
Collector current IC (mA)
160 IB = 1.0 mA 0.8 mA 0.6 mA 80 0.4 mA
160
120
1 Ta = 75C 0.1 25C -25C 0.01
120
25C -25C
80
40 0.2 mA 0 0 2 4 6 8 10 12
40
0
1
10
100
1 000
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
4
Input voltage VIN (V)
10
3
1
2
0.1
1
0
1
10
100
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR221M IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
10
VCE(sat) IC
IC / IB = 10
hFE IC
500 VCE = 10 V
200
Forward current transfer ratio hFE
400
Collector current IC (mA)
1
160
Ta = 75C
0.1
300
120
0.5 mA 0.4 mA 0.3 mA 0.2 mA
25C
Ta = 75C 25C
200
80
-25C
0.01
-25C
40
0.1 mA
100
0
0.001
0
1 10 100 1 000
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00010CED
13
UNR221x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
5
IO VIN
104
f = 1 MHz IE = 0 Ta = 25C
VIN IO
VO = 5 V Ta = 25C
100
VO = 0.2 V Ta = 25C
4
Output current IO (A)
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
0.1
1
0 0.1
1
1
10
100
0.4
0.01
0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR221N IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40 0.1 mA
10
VCE(sat) IC
IC / IB = 10
hFE IC
480 VCE = 10 V
120
Forward current transfer ratio hFE
400 Ta = 75C
Collector current IC (mA)
1
320 25C 240
80
0.1
Ta = 75C 25C -25C
160
-25C
80
0
0
2
4
6
8
10
12
0.01 1
10
100
1 000
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
0.1
1
0
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
14
SJH00010CED
UNR221x Series
Characteristics charts of UNR221T IC VCE
160
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA
10 IC / IB = 10
480
hFE IC
VCE = 10 V
120
Forward current transfer ratio hFE
400 Ta = 75C
Collector current IC (mA)
1
320 25C
80
240
0.1 25C
Ta = 75C
160
-25C
40 0.1 mA
80
-25C 0.01
0
0
0
2
4
6
8
10
12
1
10
100
1 000
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
IO VIN
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR221V IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C
10
VCE(sat) IC
IC / IB = 10 240
hFE IC
VCE = 10 V
Collector current IC (mA)
120
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA
Forward current transfer ratio hFE
200
1
160 Ta = 75C 25C 80 -25C
80
0.6 mA 0.5 mA
120
Ta = 75C 0.1 25C -25C
40 0.4 mA 0.3 mA 0.2 mA 10 12
40
0
0
2
4
6
8
0.01
0 1 10 100 1 000
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00010CED
15
UNR221x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
0.1
1
0
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR221Z IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40 0.1 mA
10
VCE(sat) IC
IC / IB = 10
hFE IC
480 VCE = 10 V
120
Forward current transfer ratio hFE
400
Collector current IC (mA)
1
320
Ta = 75C
80
240
25C -25C
Ta = 75C 0.1 25C -25C
160
80
0
0
2
4
6
8
10
12
0.01
0
1 10 100 1 000
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
0.1
1
0
1
10
100
1 0.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
16
SJH00010CED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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